통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
RFHIC’s RWP1020100-53 is a 120 W, gallium-nitride (GaN) Wideband Power Amplifier designed for various defense applications. This gallium-nitride (GaN) wideband amplifier operates from 1,000 to 2,000 MHz and offers high reliability and ruggedness. The RWP1020100-53 is fabricated using RFHIC’s state-of-the-art gallium-nitride on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product Specification| Min Freq.(MHz) | 1000MHz |
|---|---|
| Max Freq.(MHz) | 2000MHz |
| Type | Pallet |
| Typ Output Power(W) | 120W |
| Power Gain(dB) | 53.8dB |
| Efficiency | 43% |
| VDC(V) | 36 |